WebJul 8, 2024 · It has been only recently realized that topological vortices associated with structural distortions or ordered spins are rather common in numerous materials where long-range interactions are not dominant. Incommensurate modulations that frequently occur in charge density wave (CDW) materials are oft … WebTwo-dimensional metallic transition metal dichalcogenides (TMDs) are of interest for studying phenomena such as charge-density wave (CDW) and superconductivity. Few …

Commensurately modulated structure of 4H(b)-TaSe2 determined …

Weband 1T-TaSe2were probed by variable temperature UHV-STM. In 1T-TaS2, which indicates a metal-Mott insulator transition at 180 K, the impurity image varied drastically depending on its electronic structure: in its metallic phase, defects were imaged as less-conducting regions with a lateral size of ∼2 nm, while in the insulating phase spherically oscillating … WebSep 28, 2016 · Compared with surface-sensitive techniques such as STM, HAADF-STEM probes the nuclei positions of the entire thin specimen in projection, with particular sensitivity to high-Z elements like Ta. With cryo-STEM we observed phase transitions in the CDW material—e.g., the NC-to-C phase transition of exfoliated 1T-TaS 2 . maryann wolff

CDWs and Superconductivity in 2D Materials - University …

WebMay 15, 1990 · The surface atomic structure and the charge-density-wave (CDW) structure in the 1T phase of TaSe 2, TaS 2, and VSe 2 have been studied at 4.2, 77, and 300 K. The response of the scanning tunneling microscope (STM) to the CDW superlattice in 1T-TaSe 2 and 1T-TaS 2 is extremely strong, while in 1T-VSe 2 the CDW generates a much weaker … WebNov 30, 2024 · STM/STS experiments were carried out in a commercial UHV, low-temperature, and high-magnetic field STM USM-1300 from Unisoku operating at T = 0.34 K unless otherwise stated. STS measurements (using Pt/Ir tips) were performed using the lock-in technique with typical a.c. modulations of 20–50 μV at 833 Hz for the low-bias … WebBlack phosphorus is a semiconductor with a band gap of ~0.3 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers down to single layer phosphorus (phosphorene). We have also succeeded in the growth of an Phosphorus-Arsenic alloy which has a similar unit cell with the black phosphorus. huntingtree primary school staff